2 9rd60 general purpose thyristor a d v a n c i n g t h e s e m i c o n d u c t o r i n d u s t r y s i n c e 1 9 7 2 ? 2013 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 973 - 377 - 9566, fax. 1 - 973 - 377 - 3078 www.americanmicrosemi.com document page 1 of 1 revised 06/2013 abstract t he 29RD60 is a general purpose p - n - p - n silicon control rectifier used primarily for switching . the thyristor is enclosed in a hermetically sealed ni - 2 metal stud package, which contributes to the durability and longevity o f the device. me chanical specifications i mage serves as a representation of the package style only mm aa 39.0 max ab 11.0 0.5 ac 4.0 0.5 ad 2.2 max ba 8.0 bb 4.0 max ca 21.0 cb 19.0 0.3 d1 ?1.8 d2 ?3.6 t1 m6 x 1.0 n ote : all dimensions are in millimeters v rsm v rrm i t(av) i tsm i 2 t p gm p g(av) v grm i gfm tj tstg i rrm / i drm (v) v drm (v) (a) t c (c) (50 hz) (a) t=2 - 10ms (a 2 s) (w) (w) (v) (a) (c) (c) (ma) tj (c) 700 600 26.0 88 500 1250.00 5.0 0.50 5.0 2.0 125 - 40~125 10.0 125 e lectrical characteristics v tm v gt i gt v gd (min) dv/dt (min) i h rth pkg. tj i tm tc tj v d tj v d typ. (v) (c) (a) (v) (ma) (c) (v) (c) (v) (v/s) (c) (v) (ma) (c/w) 1.92 25 80 2.5 50.00 25 0.20 125 2/3v drm 200 125 2/3v drm 70 0.8000 ni - 2
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